Samsung Roadmap Targets 1000-Layer NAND and Future 32TB SSDs
Samsung has outlined an ambitious NAND Flash roadmap that extends well beyond current-generation storage technologies, with plans ultimately targeting 900 to 1000-layer NAND architectures during the next decade.
Samsung has outlined an ambitious NAND Flash roadmap that extends well beyond current-generation storage technologies, with plans ultimately targeting 900 to 1000-layer NAND architectures during the next decade. The roadmap was presented at the IEEE/JSAP VLSI Symposium 2026 and provides insight into how the company intends to continue increasing flash memory density as demand for AI, cloud computing, and high-capacity storage accelerates. According to Samsung's presentation, the company plans to reach approximately 420 NAND layers by 2029 before advancing beyond 560 layers in 2030. These developments represent the next phase of vertical NAND scaling, which has become the industry's primary method of increasing storage density as conventional process shrinking becomes increasingly challenging. Beyond 2030, Samsung's plans become significantly more aggressive. The company is exploring NAND solutions containing between 900 and 1000 layers. Rather than manufacturing a single monolithic NAND structure with that many layers, Samsung intends to employ Cell Multi-Bonding (CMB) technology. This approach combines multiple NAND structures within a single package to achieve substantially higher effective densities. Samsung's roadmap specifically references pairing two approximately 450-layer NAND structures. Through CMB packaging, the combined device would approach the density of a 1000-layer solution while potentially avoiding some of the manufacturing challenges associated with producing a single stack of comparable height. One of the most significant advantages would be increased storage capacity. Samsung estimates that future NAND generations based on this technology could deliver roughly four times the storage density of current solutions. In practical terms, SSD capacities could increase dramatically without requiring larger form factors. The company highlighted a scenario in which an 8TB QLC-based M. 2 SSD could eventually scale to capacities as high as 32TB. Such density improvements would benefit a wide range of markets, including consumer storage, enterprise systems, cloud infrastructure, and artificial intelligence deployments. As storage demands continue to grow, higher-density NAND remains a critical technology for maintaining performance and capacity growth while controlling physical size and power consumption. However, Samsung acknowledged that several significant engineering challenges remain. Wafer warpage becomes increasingly problematic as NAND structures grow taller, potentially affecting yields and manufacturing consistency. The company identified this issue as one of the primary obstacles to future scaling efforts. Layer alignment is another major concern. Hundreds of vertically stacked layers require extremely precise overlay control throughout the manufacturing process. Even small alignment deviations can affect device reliability and yield. To address these challenges, Samsung plans to introduce an Upper Chuck Design intended to control wafer deformation and implement Overlay Correction technologies to improve interlayer alignment accuracy. While commercial products based on these technologies remain years away, Samsung's roadmap demonstrates that NAND scaling still has considerable room for growth. If successful, the company's future architectures could enable SSD capacities far beyond today's mainstream products while maintaining familiar physical formats. Samsung NAND RoadmapTarget2029 NAND GenerationApproximately 420 Layers2030 NAND GenerationMore Than 560 LayersFuture Target900–1000 LayersKey TechnologyCell Multi-Bonding (CMB)CMB Configuration2 × 450-Layer NAND StructuresStorage Density GainUp to 4×Example SSD Capacity8TB to 32TB PotentialManufacturing ChallengeWafer WarpageManufacturing ChallengeLayer Alignment AccuracyMitigation TechnologyUpper Chuck DesignMitigation TechnologyOverlay CorrectionSource: Samsung Electronics, IEEE/JSAP VLSI Symposium 2026.